DocumentCode
2623873
Title
A SiGe HBT 24 GHz sub-harmonic direct-conversion IQ-demodulator
Author
Lindberg, Peter ; Öjefors, Erik ; Sönmez, Ertugrul ; Rydberg, Anders
Author_Institution
Uppsala Univ., Sweden
fYear
2004
fDate
8-10 Sept. 2004
Firstpage
247
Lastpage
250
Abstract
The paper presents an IQ-demodulator for use in a 24 GHz direct conversion receiver. The circuit has been monolithically implemented in a commercial SiGe HBT process production line using a standard (20 Ωcm) substrate. Measured results show a conversion gain of 11 dB, a LO/RF isolation of 35 dB and a 1-dB compression point of -10 dBm while consuming 101 mA at 3 V Vcc.
Keywords
Ge-Si alloys; bipolar MMIC; demodulators; heterojunction bipolar transistors; integrated circuit design; radio receivers; 101 mA; 11 dB; 20 ohmcm; 24 GHz; 3 V; LO/RF isolation; SiGe; compression point; conversion gain; direct conversion receiver; silicon-germanium HBT; subharmonic direct-conversion IQ-demodulator; substrate; Capacitors; Circuits; Costs; Filters; Germanium silicon alloys; Heterojunction bipolar transistors; Radio frequency; Silicon germanium; Substrates; Transconductors;
fLanguage
English
Publisher
ieee
Conference_Titel
Silicon Monolithic Integrated Circuits in RF Systems, 2004. Digest of Papers. 2004 Topical Meeting on
Print_ISBN
0-7803-8703-1
Type
conf
DOI
10.1109/SMIC.2004.1398214
Filename
1398214
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