DocumentCode
2623890
Title
24 and 36 GHz SiGe HBT power amplifiers
Author
Chartier, Sebastien ; Sonmez, E. ; Schumacher, Hermann
Author_Institution
Dept. of Electron Devices & Circuits, Ulm Univ., Germany
fYear
2004
fDate
8-10 Sept. 2004
Firstpage
251
Lastpage
254
Abstract
We present two amplifiers using the SiGe HBT technology, operating at 24 GHz and 36 GHz, respectively. The first amplifier was designed to operate in the 24 GHz ISM band, especially for traffic and automotive applications. In the next step, this amplifier was improved to reach higher frequencies. Both amplifiers show a gain higher than 20 dB, a good matching as well as a high output linearity.
Keywords
Ge-Si alloys; MMIC power amplifiers; bipolar MIMIC; bipolar MMIC; heterojunction bipolar transistors; integrated circuit design; millimetre wave power amplifiers; 24 GHz; 36 GHz; ISM band; MMIC amplifiers; SiGe; automotive applications; power amplifiers; silicon-germanium HBT technology; traffic applications; Ask IEEE; Document delivery; Germanium silicon alloys; Heterojunction bipolar transistors; Power amplifiers; Silicon germanium;
fLanguage
English
Publisher
ieee
Conference_Titel
Silicon Monolithic Integrated Circuits in RF Systems, 2004. Digest of Papers. 2004 Topical Meeting on
Print_ISBN
0-7803-8703-1
Type
conf
DOI
10.1109/SMIC.2004.1398215
Filename
1398215
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