Signal evolution in semiconductor radiation detectors

The transient analysis of large area semiconductor radiation detectors operating near room temperature is presented. The analysis is based on the Ramo method for computing the instantaneous current induced in conductors by motion of electrons. The output of a detector operating in the charge-sensitive configuration will be calculated starting from a moment when an incoming particle hits the detector active volume until generated charge carriers have been absorbed by the collection electrode. The paper addresses effects of the transient on intrinsic pile-up and the dispersion of the measured particle energies.