DocumentCode :
2624060
Title :
Gallium arsenide on insulator by electrostatic bonding
Author :
Huang, Qing-An ; Lu, Shi-Ji ; Tong, Qin-Yi
Author_Institution :
Microelectron. Center, Southeast Univ., Nanjing, China
fYear :
1989
fDate :
3-5 Oct 1989
Firstpage :
62
Lastpage :
63
Abstract :
Summary form only given. A technique for bonding GaAs to silicon by depositing a thin phosphosilicate glass (PSG) layer on the surface of the polished GaAs member, resulting in a GaAs-Si structure, is described. The PSG layer is deposited by the chemical vapor deposition method, which is capable of controlling film composition and thickness. Scanning electron microscopy (SEM) has been used to view the cross-section image of the GaAs-PSG-Si structure. An etch-back process is used to produce GaAs-on-insulator whose electrical quality is equal to that of bulk GaAs. Bonds created during rapid annealing are mechanically strong enough to withstand the mechanical and/or chemical thinning of the GaAs wafer to the desired thickness and subsequent device processing
Keywords :
III-V semiconductors; gallium arsenide; phosphosilicate glasses; scanning electron microscope examination of materials; semiconductor technology; semiconductor-insulator boundaries; silicon; GaAs-P2O5-SiO2-Si; GaAs-PSG-Si; SEM; Si substrate; chemical thinning; chemical vapor deposition; cross-section image; electrical quality; electrostatic bonding; etch-back process; mechanical thinning; phosphosilicate glass; polished GaAs member; rapid annealing; Bonding; Chemical vapor deposition; Electrostatics; Etching; Gallium arsenide; Glass; Insulation; Scanning electron microscopy; Silicon; Thickness control;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
SOS/SOI Technology Conference, 1989., 1989 IEEE
Conference_Location :
Stateline, NV
Type :
conf
DOI :
10.1109/SOI.1989.69766
Filename :
69766
Link To Document :
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