Title :
RF performance degradation in pMOS transistors due to hot carrier and soft breakdown effects
Author :
Liu, Yi ; Sadat, Anwar ; Yu, Chuanzhao ; Yuan, J.S.
Author_Institution :
Dept. of Electr. Eng., Central Florida Univ., Orlando, FL, USA
Abstract :
Hot carrier and soft breakdown stress on pMOS RF devices has been examined. The cut-off frequency and the S-parameters degrade with stress. The measured threshold voltage shifts negatively and mobility decreases after stress. It is our understanding that this is the first attempt to investigate hot carrier and soft breakdown effects on RF performance of pMOS transistors and first reporting of negative shift in threshold voltage.
Keywords :
MOSFET; S-parameters; carrier mobility; hot carriers; microwave transistors; semiconductor device breakdown; 0 to 10 GHz; RF performance degradation; S-parameters; cut-off frequency; hot carrier stress; mobility; pMOS transistors; soft breakdown stress; threshold voltage; Cutoff frequency; Degradation; Electric breakdown; Hot carriers; MOSFETs; Radio frequency; Scattering parameters; Stress; Threshold voltage; Voltage measurement;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems, 2004. Digest of Papers. 2004 Topical Meeting on
Print_ISBN :
0-7803-8703-1
DOI :
10.1109/SMIC.2004.1398231
