An 8.5 GHz SiGe-based amplifier using fully self-aligned double mesa SiGe HBTs

Author

Lee, Kok-Yan ; Johnson, Brian N. ; Mohammadi, Saeed ; Bhattacharya, Pallab K. ; Katehi, Linda P B ; Ponchak, George

Author_Institution

Michigan Univ., Ann Arbor, MI, USA

fYear

2004

fDate

8-10 Sept. 2004

Firstpage

311

Lastpage

313

Abstract

We report an 8.5 GHz fully integrated SiGe amplifier developed using a novel fully self-aligned double mesa HBT process technology. The common-base HBT demonstrates a G_max > 14 dB and an f_max > 37 GHz. At 8.5 GHz, the small-signal gain of the amplifier is better than 4 dB, with input and output return loss of -10 dB and -5 dB, respectively. The amplifier is also shown to be unconditionally stable.

Keywords

Ge-Si alloys; MMIC amplifiers; bipolar MMIC; bipolar analogue integrated circuits; circuit stability; heterojunction bipolar transistors; integrated circuit design; semiconductor technology; 10 dB; 5 dB; 8.5 GHz; MMIC design; MMIC fabrication; SiGe; double mesa silicon-germanium HBT; integrated amplifier; return loss; self-aligned double mesa HBT process; small-signal gain; Chemical technology; Etching; Germanium silicon alloys; Gold; Heterojunction bipolar transistors; Integrated circuit technology; MMICs; Monolithic integrated circuits; Scanning electron microscopy; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in RF Systems, 2004. Digest of Papers. 2004 Topical Meeting on

Print_ISBN

0-7803-8703-1

Type

conf

DOI

10.1109/SMIC.2004.1398232

Filename

1398232