Title :
Characterization of SiPM: Temperature dependencies
Author_Institution :
UniversitÃ\xa0 degli Studi dell¿Insubria, Dipartimento di Fisica e Matematica, Via Valleggio 11, 22100 Como, Italy
Abstract :
Within RAPSODI1 novel types of Silicon Photo-Multiplier (SiPM) from different suppliers were investigated. The main parameters: dark count rate, amplification, dynamic range, quantum detection efficiency and optical cross-talk have been studied to qualify the detectors. Results demonstrate the possibility to apply this detection technology to intense photon fluxes detection as well as to low plurality ones. Characterization protocol for a full SiPM qualification was developed. The most important result is the demonstration of temperature independence of SiPM gain versus over voltage.
Keywords :
Dynamic range; Optical crosstalk; Optical detectors; Photonics; Protocols; Qualifications; Silicon; Stimulated emission; Temperature dependence; Voltage control; Characterization; Silicon Photo Multipliers; Temperature dependance;
Conference_Titel :
Nuclear Science Symposium Conference Record, 2008. NSS '08. IEEE
Conference_Location :
Dresden, Germany
Print_ISBN :
978-1-4244-2714-7
Electronic_ISBN :
1095-7863
DOI :
10.1109/NSSMIC.2008.4774854
