DocumentCode
2624198
Title
A Low Noise Figure 94 Gc Gallium Arsenide Mixer Diode
Author
Bauer, R.J.
Volume
65
Issue
1
fYear
1965
fDate
5-7 May 1965
Firstpage
95
Lastpage
100
Abstract
Until recently low noise figure mixer diodes for operation above 80 gc were very difficult to achieve and had short life times. This paper describes the procedures and results that evolved from a development program that eliminated these disadvantages. The three major areas to be investigated in developing a low noise figure diode were selection of an intermediate frequency for minimum crystal noise ratio, selection of a semiconductor material that gave low conversion loss, and mounting the diode such that package parasitics have a minimal effect. (The term low noise flgure in this discussion infers crystal noise figure, i.e.. the product of the conversion loss (Lc) and the noise ratio. It is assumed that tie noise figure of the IF amplifier, whether it be transistor, tunnel diode or TWT, will remain relatively constant through the low microwave frequencies. )
Keywords
Frequency conversion; Gallium arsenide; Low-noise amplifiers; Microwave amplifiers; Noise figure; Semiconductor device noise; Semiconductor device packaging; Semiconductor diodes; Semiconductor materials; Signal to noise ratio;
fLanguage
English
Publisher
ieee
Conference_Titel
G-MTT Symposium Digest, 1965
Conference_Location
Clearwater, Florida, USA
Type
conf
DOI
10.1109/GMTT.1965.1122483
Filename
1122483
Link To Document