• DocumentCode
    2624198
  • Title

    A Low Noise Figure 94 Gc Gallium Arsenide Mixer Diode

  • Author

    Bauer, R.J.

  • Volume
    65
  • Issue
    1
  • fYear
    1965
  • fDate
    5-7 May 1965
  • Firstpage
    95
  • Lastpage
    100
  • Abstract
    Until recently low noise figure mixer diodes for operation above 80 gc were very difficult to achieve and had short life times. This paper describes the procedures and results that evolved from a development program that eliminated these disadvantages. The three major areas to be investigated in developing a low noise figure diode were selection of an intermediate frequency for minimum crystal noise ratio, selection of a semiconductor material that gave low conversion loss, and mounting the diode such that package parasitics have a minimal effect. (The term low noise flgure in this discussion infers crystal noise figure, i.e.. the product of the conversion loss (Lc) and the noise ratio. It is assumed that tie noise figure of the IF amplifier, whether it be transistor, tunnel diode or TWT, will remain relatively constant through the low microwave frequencies. )
  • Keywords
    Frequency conversion; Gallium arsenide; Low-noise amplifiers; Microwave amplifiers; Noise figure; Semiconductor device noise; Semiconductor device packaging; Semiconductor diodes; Semiconductor materials; Signal to noise ratio;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    G-MTT Symposium Digest, 1965
  • Conference_Location
    Clearwater, Florida, USA
  • Type

    conf

  • DOI
    10.1109/GMTT.1965.1122483
  • Filename
    1122483