Title :
The 4500 V trench gate IEGT with current sense function
Author :
Kon, Hironobu ; Kitagawa, Mitsuhiko
Author_Institution :
Power & Ind. Syst. Res. & Dev. Center, Toshiba Corp., Tokyo, Japan
Abstract :
This paper presents the 4500 V trench gate injection enhanced gate transistor (IEGT) with current sense function, for the first time, that realizes high short circuit ability without suffering its excellent trade-off between turn-off switching loss and on-state voltage. A press pack IEGT, containing multiplied 20 IEGT chips, can be controlled by its collector current under short circuit condition
Keywords :
MIS devices; electric current measurement; power semiconductor devices; short-circuit currents; 4500 V; collector current; current sense function; high short circuit ability; injection enhanced gate transistor; on-state voltage; short circuit condition; trench gate IEGT; turn-off switching loss; Charge carrier density; Circuits; Control systems; Electron emission; Insulated gate bipolar transistors; Power systems; Protection; Research and development; Thyristors; Voltage control;
Conference_Titel :
Applied Power Electronics Conference and Exposition, 1999. APEC '99. Fourteenth Annual
Conference_Location :
Dallas, TX
Print_ISBN :
0-7803-5160-6
DOI :
10.1109/APEC.1999.750434
