Title :
A novel low power, class AB SiGe LNA for high dynamic range wireless communications at RF frequencies
Author :
Kane, B.C. ; Wyatt, M. ; Marcincavage, J. ; Starratt, D. ; Copeland, D. ; Calvo, M. ; Geis, L. ; Castro, A. ; Mogensen, J. ; Wall, J.
Author_Institution :
Insyte Inc., Palm Harbor, FL, USA
Abstract :
This paper describes an ultra linear, low power consumption, high/low gain state LNA based on the Gilbert micromixer input stage for use in any modern day wireless communications systems. The LNA was designed for L band operation, and has a simulated performance with these characteristics at 1.9 GHz: Voltage gain of 15 dB, noise figure of 2.60 dB, IIP3 of +4 dBm, and a current consumption of only 1.75 mA from a +3.0 V source. In addition, the LNA has an input impedance of 53 Ω that does not vary with up to +2 dBm input signal levels, a characteristic not found in other LNA architectures.
Keywords :
Ge-Si alloys; MMIC amplifiers; MMIC mixers; circuit simulation; electric impedance; integrated circuit design; integrated circuit modelling; low-power electronics; radio receivers; semiconductor materials; 1.75 mA; 1.9 GHz; 15 dB; 2.60 dB; 3 V; 53 ohm; Gilbert micromixer input stage; IIP3; L band operation; LNA design; RF frequencies; SiGe; current consumption; high dynamic range wireless communications; high/low gain state LNA; input impedance; input signal levels; low power class AB SiGe LNA; noise figure; simulated performance; ultra linear low power consumption LNA; voltage gain; Dynamic range; Energy consumption; Germanium silicon alloys; Impedance; Noise figure; Performance gain; Radio frequency; Silicon germanium; Voltage; Wireless communication;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems, 2004. Digest of Papers. 2004 Topical Meeting on
Print_ISBN :
0-7803-8703-1
DOI :
10.1109/SMIC.2004.1398238
