Noise characterization of double-sided silicon microstrip detectors with punch-through biasing

We report on extensive noise measurements performed on double-sided, AC-coupled, punch-through biased silicon strip detectors. We used a single-channel acquisition chain, reading one strip per side, all other strips being kept grounded. The noise has been measured over a wide range of peaking times and leakage currents, allowing a careful determination of the various noise contributions. We determined the noise of the punch-through mechanism and we observed, on different sensors, two unexpected noise terms, one related to the punch-through current and the other to the presence of resistive layers at the Si/SiO2 interface.