Thermally Stable N-Metal Gate MOSFETs Using La-Incorporated HfSiO Dielectric

Author

Alshareef, H.N. ; Harris, H.R. ; Wen, H.-C. ; Park, C.S. ; Huffman, C. ; Choi, K. ; Luan, H.F. ; Majhi, P. ; Lee, B.H. ; Jammy, R. ; Lichtenwalner, D.J. ; Jur, J.S. ; Kingon, A.I.

Author_Institution

SEMATECH, Austin, TX

fYear

0

fDate

0-0 0

Firstpage

7

Lastpage

8

Abstract

We report a thermally stable N-metal process in which surface passivation of HfSiO dielectric using thin layers of La₂O₃, deposited by either MBE or PVD, significantly shifts the metal gate effective work function toward the Si conduction band edge. Well-behaved transistors with L_g down to 70 nm have been fabricated with threshold voltage of 0.25V, mobility up to 92% of the universal SiO₂ mobility, and T_inv ~1.6 nm

Keywords

MOSFET; conduction bands; dielectric materials; hafnium compounds; lanthanum; lanthanum compounds; molecular beam epitaxial growth; silicon compounds; thermal stability; work function; 0.25 V; La-HfSiO; La-incorporated HfSiO dielectric; La₂O₃; MBE; N-metal gate MOSFET; PVD; SiO₂; conduction band edge; metal gate effective work function; surface passivation; thermally stable N-metal process; threshold voltage; Annealing; Atherosclerosis; Dielectrics; Fabrication; Instruments; Jamming; MOSFETs; Materials science and technology; Molecular beam epitaxial growth; Thermal conductivity;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 2006. Digest of Technical Papers. 2006 Symposium on

Conference_Location

Honolulu, HI

Print_ISBN

1-4244-0005-8

Type

conf

DOI

10.1109/VLSIT.2006.1705190

Filename

1705190