Title :
Study of the radiation hardness of silicon sensors for the XFEL
Author :
Fretwurst, E. ; Januschek, F. ; Klanner, R. ; Perrey, H. ; Pintilie, I. ; Renn, F.
Author_Institution :
Institute for Experimental Physics, University of Hamburg, Germany
Abstract :
Imaging experiments at the XFEL pose unprecedented requirements to the detectors in terms of radiation tolerance: Fluxes of up to 1016(12 keVphotons/cm2) corresponding to approximately 109 Gy in silicon, are expected. An irradiation station has been set up in the DORIS beam line F4, MOS test structures have been irradiated, and first results on the dose dependence of the C/V-characteristics, surface current density, and interface trap density have been obtained.
Keywords :
Breakdown voltage; Chemical lasers; Current measurement; Diodes; Free electron lasers; Measurement techniques; Physics; Radiation detectors; Silicon; X-ray lasers;
Conference_Titel :
Nuclear Science Symposium Conference Record, 2008. NSS '08. IEEE
Conference_Location :
Dresden, Germany
Print_ISBN :
978-1-4244-2714-7
Electronic_ISBN :
1095-7863
DOI :
10.1109/NSSMIC.2008.4774872
