DocumentCode :
2624707
Title :
GaAs Post-Threshold Microwave Amplifier, Mixer, and Oscillator
Author :
Hakki, B.W.
Volume :
66
Issue :
1
fYear :
1966
fDate :
16-19 May 1966
Firstpage :
1
Lastpage :
6
Abstract :
Bulk GaAs was operated simultaneously as a microwave amplifier, mixer, and oscillator under cw conditions. This was achieved by biasing the sample at post-threshold conditions, i.e., beyond the bias at which the sample broke into Gunn-type oscillations. It was found that even under these post-threshold conditions, wherein the device was oscillating at a certain frequency, the device simultaneously had the properties of a linear active element capable of mixing and amplification at other frequencies. The frequencies at which the device exhibited simultaneous amplification, mixing, and oscillation were not harmonically related. These frequencies were determined jointly by semiconductor and microwave circuits.
Keywords :
Frequency; Gain measurement; Gallium arsenide; Microwave amplifiers; Microwave oscillators; Noise figure; Power system harmonics; Space charge; Voltage-controlled oscillators;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
G-MTT International Symposium Digest, 1966
Conference_Location :
Palo Alto, CA, USA
Type :
conf
DOI :
10.1109/GMTT.1966.1122516
Filename :
1122516
Link To Document :
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