Title :
Development of New TiN/ZrO2/Al2O3/ZrO2/TiN Capacitors Extendable to 45nm Generation DRAMs Replacing HfO2 Based Dielectrics
Author :
Kil, Deok-Sin ; Song, Han-Sang ; Lee, Kee-Jeung ; Hong, Kwon ; Kim, Jin-Hyock ; Park, Ki-Seon ; Yeom, Seung-Jin ; Roh, Jae-Sung ; Kwak, Noh-Jung ; Sohn, Hyun-Chul ; Kim, Jin-Woong ; Park, Sung-Wook
Author_Institution :
R&D Div., Hynix Semicond. Inc., Kyoungki
Abstract :
New ZrO2/Al2O3/ZrO2 (ZAZ) dielectric film was theoretically designed and successfully demonstrated to be applicable to 45nm DRAM devices. ZAZ dielectric film is a combined structure from tetragonal ZrO2 and amorphous Al 2O3. Thus prepared ZAZ TFT capacitors showed very small Tox.eq value of 6.3Aring and low leakage current less than 1fA/cell. It was also confirmed that ZAZ TFT capacitor was thermally robust during backend full thermal process by applying it to the final DRAM product in mass production
Keywords :
DRAM chips; capacitors; dielectric thin films; sapphire; titanium compounds; zirconium compounds; 45 nm; DRAM; HfO2; TIT capacitors; TiN-ZrO2-Al2O3-ZrO2 -TiN; ZAZ dielectric film; Aluminum oxide; Amorphous materials; Capacitors; Dielectric films; Hafnium oxide; Leakage current; Random access memory; Robustness; Thin film transistors; Tin;
Conference_Titel :
VLSI Technology, 2006. Digest of Technical Papers. 2006 Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
1-4244-0005-8
DOI :
10.1109/VLSIT.2006.1705205
