• DocumentCode
    2624808
  • Title

    Very Low Voltage SiO2/HfON/HfAlO/TaN Memory with Fast Speed and Good Retention

  • Author

    Lai, C.H. ; Chin, Albert ; Kao, H.L. ; Chen, K.M. ; Hong, M. ; Kwo, J. ; Chi, C.C.

  • Author_Institution
    Dept. of Electr. Eng., Nat. Chiao-Tung Univ., Hsinchu
  • fYear
    0
  • fDate
    0-0 0
  • Firstpage
    44
  • Lastpage
    45
  • Abstract
    At 85degC under very low plusmn 8V and fast 100mus P/E, good memory device integrity of 2.5V initial DeltaVth and 1.45 V 10-year extrapolated retention are obtained. This was achieved in SiO 2/HfON/HfAlO/TaN MONOS using very high-kappa (~22) and deep trapping HfON, which further gives good 1.0V 10-year memory window even at 125degC
  • Keywords
    hafnium compounds; low-power electronics; semiconductor storage; silicon compounds; tantalum compounds; 1.0 V; 1.45 V; 125 C; 2.5 V; 85 C; MONOS; SiO2-HfON-HfAlO-TaN; memory device integrity; very low voltage memory; Atherosclerosis; Capacitance; Circuits; Inverters; Low voltage; MONOS devices; Materials science and technology; Nonvolatile memory; Physics; SONOS devices;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, 2006. Digest of Technical Papers. 2006 Symposium on
  • Conference_Location
    Honolulu, HI
  • Print_ISBN
    1-4244-0005-8
  • Type

    conf

  • DOI
    10.1109/VLSIT.2006.1705208
  • Filename
    1705208
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2624808