A Highly Stackable Thin-Film Transistor (TFT) NAND-Type Flash Memory

Author

Lai, Erh-Kun ; Lue, Hang-Ting ; Hsiao, Yi-Hsuan ; Hsieh, Jung-Yu ; Lee, Shih-Chin ; Lu, Chi-Pin ; Wang, Szu-Yu ; Yang, Ling-Wu ; Chen, Kuang-Chao ; Gong, Jeng ; Hsieh, Kuang-Yeu ; Ku, Joseph ; Liu, Rich ; Lu, Chih-Yuan

Author_Institution

Macronix Int. Co. Ltd., Hsinchu

fYear

0

fDate

0-0 0

Firstpage

46

Lastpage

47

Abstract

For the first time, a successful TFT NAND-type flash memory is demonstrated using a low thermal budget process suitable for stacking the memories. A TFT-SONOS device using bandgap engineered SONOS (BE-SONOS) (Lue, et al. 2005) with fully-depleted (FD) poly silicon (50 nm) channel and tri-gate P⁺-poly gate is integrated into a NAND array. Small devices (L/W=0.18/0.09 mum) with good DC performance are achieved, owing to the good control capability of the tri-gate FD structure. Successful NAND array functions are demonstrated, with more than 1 muA read current for a 16-string NAND array and good program disturb immunity. This new device also shows good endurance and data retention, and negligible read disturb. These results are very encouraging for future 3D flash memory

Keywords

NAND circuits; flash memories; silicon compounds; thin film circuits; thin film transistors; 3D flash memory; NAND; TFT SONOS device; highly stackable thin film transistor; Flash memory; Fuses; Immune system; Photonic band gap; Read only memory; SONOS devices; Silicon; Stacking; Thin film transistors; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 2006. Digest of Technical Papers. 2006 Symposium on

Conference_Location

Honolulu, HI

Print_ISBN

1-4244-0005-8

Type

conf

DOI

10.1109/VLSIT.2006.1705209

Filename

1705209