Performance Enhancement of MUGFET Devices Using Super Critical Strained-SOI (SC-SSOI) and CESL

Author

Collaert, N. ; Rooyackers, R. ; Clemente, F. ; Zimmerman, P. ; Cayrefourcq, I. ; Ghyselen, B. ; San, K.T. ; Eyckens, B. ; Jurczak, M. ; Biesemans, S.

Author_Institution

IMEC, Leuven

fYear

0

fDate

0-0 0

Firstpage

52

Lastpage

53

Abstract

This paper describes the performance of nMOS and pMOS tall triple gate (MUGFET) devices with fin widths down to 20 nm fabricated for the first time on super critical strained Si on insulator (SC-SSOI). The electrical and muRaman measurements show that the tensile strain can be maintained in SSOI substrates even for fins as narrow as 20nm giving 80% and 10% drive current increase in long and short channel nMOS devices, respectively. Additionally, the introduction of tensile contact etch stop layers (CESL) improves the nMOS drive current by as much as 35% for short channel devices

Keywords

MOSFET; etching; silicon-on-insulator; substrates; tensile strength; MUGFET devices; contact etch stop layers; drive current; nMOS; pMOS; short channel devices; super critical strained-SOI; tensile strain; triple gate devices; Annealing; Capacitive sensors; Electron mobility; Instruments; MOS devices; Optical films; Semiconductor films; Spectroscopy; Substrates; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 2006. Digest of Technical Papers. 2006 Symposium on

Conference_Location

Honolulu, HI

Print_ISBN

1-4244-0005-8

Type

conf

DOI

10.1109/VLSIT.2006.1705212

Filename

1705212