Title :
Strained N-Channel FinFETs with 25 nm Gate Length and Silicon-Carbon Source/Drain Regions for Performance Enhancement
Author :
Liow, Tsung-Yang ; Tan, Kian-Ming ; Lee, Rinus T P ; Du, Anyan ; Tung, Chih-Hang ; Samudra, Ganesh S. ; Yoo, Won-Jong ; Balasubramanian, N. ; Yeo, Yee-Chia
Abstract :
We report the demonstration of 25 nm gate length LG tri-gate FinFETs with Si0.99C0.01 source and drain (S/D) regions. The strain-induced mobility enhancement due to the Si0.99C0.01 S/D leads to a drive current IDsat improvement of 20% at a fixed off-state current Ioff of 1times10-7 A/mum. With additional channel strain engineering, FinFETs incorporating Si0.99C0.01 S/D and a tensile-stress silicon nitride (SiN) capping etch-stop layer (ESL) achieve an IDsat enhancement of 56%
Keywords :
MOSFET; nanotechnology; silicon compounds; wide band gap semiconductors; 25 nm; Si0.99C0.01; SiN; channel strain engineering; etch-stop layer; strain-induced mobility enhancement; tensile stress; tri-gate FinFET; Capacitive sensors; Epitaxial growth; Etching; FinFETs; Implants; Resists; Scalability; Silicon carbide; Silicon compounds; Tensile strain;
Conference_Titel :
VLSI Technology, 2006. Digest of Technical Papers. 2006 Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
1-4244-0005-8
DOI :
10.1109/VLSIT.2006.1705214
