Re-wafer scale integration: a new approach to active phased arrays

Author

Whicker, L.R. ; Zingaro, J.J. ; Driver, M.C. ; Clarke, R.C.

Author_Institution

Westinghouse Esg, Baltimore, MD, USA

fYear

1990

fDate

23-25 Jan 1990

Firstpage

50

Lastpage

56

Abstract

Describes a new approach to active phased array technology. Here, several modules are fabricated at the same time and placed in a layered structure. The layers include the RF modules, cooling manifold, DC bias distribution, RF manifold, and radiating elements. In this configuration, 16 or more T/R modules are fabricated on a single 3-inch GaAs wafer. The realization of multiple modules on a wafer is made possible by redundancy of circuit elements and novel mechanical switches. Preliminary results on these efforts are presented

Keywords

III-V semiconductors; MMIC; VLSI; active antennas; antenna phased arrays; cooling; gallium arsenide; integrated circuit technology; microwave amplifiers; microwave antennas; power amplifiers; power integrated circuits; 2 to 12 GHz; 3 in; DC bias distribution; GaAs wafer; RF manifold; RF modules; Re-wafer scale integration; SHF; T/R modules; WSI; active phased array technology; active phased arrays; cooling manifold; layered structure; mechanical switches; multiple modules; power IC; radiating elements; redundancy of circuit elements; semiconductors; transmit/receive modules; Cooling; Costs; Gallium arsenide; Packaging; Phased arrays; Radar antennas; Radar applications; Radio frequency; Switches; Switching circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Wafer Scale Integration, 1990. Proceedings., [2nd] International Conference on

Conference_Location

San Francisco, CA

Print_ISBN

0-8186-9013-5

Type

conf

DOI

10.1109/ICWSI.1990.63882

Filename

63882