• DocumentCode
    2625089
  • Title

    Periodically domain-inverted AlGaAs quasi-phase-matched frequency-conversion waveguides

  • Author

    Koh, S. ; Shiraki, Y. ; Kondo, T. ; Ito, R.

  • Author_Institution
    Res. Center for Adv. Sci. & Technol., Tokyo Univ., Japan
  • fYear
    2000
  • fDate
    6-10 Aug. 2000
  • Firstpage
    383
  • Lastpage
    384
  • Abstract
    Periodically domain-inverted AlGaAs quasi-phase-matched waveguides have been fabricated by GaAs-Ge-GaAs [100] sublattice reversal epitaxy. A preliminary SHG experiment has exhibited quasi-phase-matched output at the fundamental wavelength of 1.576 /spl mu/m.
  • Keywords
    III-V semiconductors; aluminium compounds; domains; gallium arsenide; molecular beam epitaxial growth; optical fabrication; optical harmonic generation; optical phase matching; optical waveguides; 1.576 mum; AlGaAs; AlGaAs quasi-phase-matched frequency-conversion waveguides; GaAs-Ge-GaAs; GaAs-Ge-GaAs [100] sublattice reversal epitaxy; SHG experiment; fundamental wavelength; periodically domain-inverted; quasi-phase-matched output; Crystals; Epitaxial growth; Gallium arsenide; Indium tin oxide; Materials science and technology; Molecular beam epitaxial growth; Optical buffering; Optical films; Optical harmonic generation; Optical waveguides;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nonlinear Optics: Materials, Fundamentals, and Applications, 2000. Technical Digest
  • Conference_Location
    Kaua´i-Lihue, HI, USA
  • Print_ISBN
    1-55752-646-X
  • Type

    conf

  • DOI
    10.1109/NLO.2000.883683
  • Filename
    883683
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2625089