Title :
Periodically domain-inverted AlGaAs quasi-phase-matched frequency-conversion waveguides
Author :
Koh, S. ; Shiraki, Y. ; Kondo, T. ; Ito, R.
Author_Institution :
Res. Center for Adv. Sci. & Technol., Tokyo Univ., Japan
Abstract :
Periodically domain-inverted AlGaAs quasi-phase-matched waveguides have been fabricated by GaAs-Ge-GaAs [100] sublattice reversal epitaxy. A preliminary SHG experiment has exhibited quasi-phase-matched output at the fundamental wavelength of 1.576 /spl mu/m.
Keywords :
III-V semiconductors; aluminium compounds; domains; gallium arsenide; molecular beam epitaxial growth; optical fabrication; optical harmonic generation; optical phase matching; optical waveguides; 1.576 mum; AlGaAs; AlGaAs quasi-phase-matched frequency-conversion waveguides; GaAs-Ge-GaAs; GaAs-Ge-GaAs [100] sublattice reversal epitaxy; SHG experiment; fundamental wavelength; periodically domain-inverted; quasi-phase-matched output; Crystals; Epitaxial growth; Gallium arsenide; Indium tin oxide; Materials science and technology; Molecular beam epitaxial growth; Optical buffering; Optical films; Optical harmonic generation; Optical waveguides;
Conference_Titel :
Nonlinear Optics: Materials, Fundamentals, and Applications, 2000. Technical Digest
Conference_Location :
Kaua´i-Lihue, HI, USA
Print_ISBN :
1-55752-646-X
DOI :
10.1109/NLO.2000.883683
