122 Mb High Speed SRAM Cell with 25 nm Gate Length Multi-Bridge-Channel MOSFET (MBCFET) on Bulk Si Substrate

Author

Kim, Min Sang ; Lee, Sung-Young ; Yoon, Eun-Jung ; Kim, Sung Min ; Lian, Jun ; Lee, Kwan-heum ; Cho, Nam Myeon ; Lee, Mong-sub ; Hwang, Duhyun ; Lee, Yong-Seok ; Kim, Dong-Won ; Park, Donggun ; Ryu, Byung-Il

Author_Institution

Semicond. R&D Center, Samsung Electron. Co., Yongin

fYear

0

fDate

0-0 0

Firstpage

68

Lastpage

69

Abstract

As a part of continued multi-bridge-channel MOSFET (MBCFET) study, we have successfully fabricated 122Mb SRAM cell with 25 nm gate length CMOS MBCFET on bulk Si wafers. The 6-T MBCFET SRAM cell shows high static noise margin (SNM) of 320 mV at V_cc= 0.8 V. Using tall-embedded-gate (TEG) and source/drain (S/D) engineering, 2.6times10⁵ times on/off current ratio and 3.46 mA/mum of on-state current at 13 nA/um of off-state current were achieved. In addition, triple-bridge-channel MOSFET (TBCFET) is made for the first time and compared with single-bridge-channel MOSFET (SBCFET) and MBCFET

Keywords

CMOS integrated circuits; MOSFET; SRAM chips; semiconductor device reliability; 0.8 V; 122 MByte; 25 nm; 320 mV; SRAM cell; multibridge channel MOSFET; single bridge channel MOSFET; source/drain engineering; tall embedded gate engineering; triple bridge channel MOSFET; CMOS process; Capacitance; Doping; Etching; Fabrication; Germanium silicon alloys; MOSFET circuits; Random access memory; Silicon germanium; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 2006. Digest of Technical Papers. 2006 Symposium on

Conference_Location

Honolulu, HI

Print_ISBN

1-4244-0005-8

Type

conf

DOI

10.1109/VLSIT.2006.1705220

Filename

1705220