• DocumentCode
    2625104
  • Title

    Integrated Microwave Tunnel Diode Device

  • Author

    Okean, H.C.

  • Volume
    66
  • Issue
    1
  • fYear
    1966
  • fDate
    16-19 May 1966
  • Firstpage
    135
  • Lastpage
    141
  • Abstract
    A microwave tunnel diode amplifier usually requires both a stabilizing network and one or more reactive tuning elements associated with the tunnel diode. The stabilizing network insures satisfaction of the appropriate stability criteria governing the given amplifier configuration at all frequencies within the active frequency range of the tunnel diode (dc to resistive cutoff frequency) and, in particular, those outside the operating band. Such networks generally take the form of band rejection filters which resistively terminate the diode outside the operating band and appear essentially reactive within it. The tuning element usually consists of a shunt inductor to resonate the generally capacitive parasitic reactance of the diode at the center frequency of the amplifier.
  • Keywords
    Circuit optimization; Circulators; Cutoff frequency; Diodes; Microwave amplifiers; Microwave devices; Shunt (electrical); Thin film circuits; Thin film devices; Thin film inductors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    G-MTT International Symposium Digest, 1966
  • Conference_Location
    Palo Alto, CA, USA
  • Type

    conf

  • DOI
    10.1109/GMTT.1966.1122540
  • Filename
    1122540