DocumentCode
2625104
Title
Integrated Microwave Tunnel Diode Device
Author
Okean, H.C.
Volume
66
Issue
1
fYear
1966
fDate
16-19 May 1966
Firstpage
135
Lastpage
141
Abstract
A microwave tunnel diode amplifier usually requires both a stabilizing network and one or more reactive tuning elements associated with the tunnel diode. The stabilizing network insures satisfaction of the appropriate stability criteria governing the given amplifier configuration at all frequencies within the active frequency range of the tunnel diode (dc to resistive cutoff frequency) and, in particular, those outside the operating band. Such networks generally take the form of band rejection filters which resistively terminate the diode outside the operating band and appear essentially reactive within it. The tuning element usually consists of a shunt inductor to resonate the generally capacitive parasitic reactance of the diode at the center frequency of the amplifier.
Keywords
Circuit optimization; Circulators; Cutoff frequency; Diodes; Microwave amplifiers; Microwave devices; Shunt (electrical); Thin film circuits; Thin film devices; Thin film inductors;
fLanguage
English
Publisher
ieee
Conference_Titel
G-MTT International Symposium Digest, 1966
Conference_Location
Palo Alto, CA, USA
Type
conf
DOI
10.1109/GMTT.1966.1122540
Filename
1122540
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