DocumentCode :
2625104
Title :
Integrated Microwave Tunnel Diode Device
Author :
Okean, H.C.
Volume :
66
Issue :
1
fYear :
1966
fDate :
16-19 May 1966
Firstpage :
135
Lastpage :
141
Abstract :
A microwave tunnel diode amplifier usually requires both a stabilizing network and one or more reactive tuning elements associated with the tunnel diode. The stabilizing network insures satisfaction of the appropriate stability criteria governing the given amplifier configuration at all frequencies within the active frequency range of the tunnel diode (dc to resistive cutoff frequency) and, in particular, those outside the operating band. Such networks generally take the form of band rejection filters which resistively terminate the diode outside the operating band and appear essentially reactive within it. The tuning element usually consists of a shunt inductor to resonate the generally capacitive parasitic reactance of the diode at the center frequency of the amplifier.
Keywords :
Circuit optimization; Circulators; Cutoff frequency; Diodes; Microwave amplifiers; Microwave devices; Shunt (electrical); Thin film circuits; Thin film devices; Thin film inductors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
G-MTT International Symposium Digest, 1966
Conference_Location :
Palo Alto, CA, USA
Type :
conf
DOI :
10.1109/GMTT.1966.1122540
Filename :
1122540
Link To Document :
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