Title :
TiN/HfSiOx Gate Stack Multi-Channel Field Effect Transistor (McFET) for Sub 55nm SRAM Application
Author :
Kim, Sung Min ; Yoon, Eun Jung ; Kim, Min Sang ; Suk, Sung Dae ; Li, Ming ; Jun, Lian ; Oh, Chang Woo ; Yeo, Kyoung Hwan ; Kim, Sung Hwan ; Lee, Sung Young ; Choi, Yong Lack ; Kim, Na-young ; Yeoh, Yun-young ; Park, Hong-Bae ; Kim, Chul Sung ; Kim, Hye-Mi
Author_Institution :
Semicond. R&D Center, Samsung Electron. Co., Yongin
Abstract :
For the first time, titanium-nitride (TiN) single metal gate and high-k hafnium-silicate (HfSiOx) gate dielectric have been successfully integrated in 55nm McFET SRAM cell. The use of HfSiOx gate dielectric, not only reduces gate leakage current but also improves ION/IOFF ratio of PFET to 108. Using local fin implantation (LFI) scheme, junction capacitance is reduced by 13% and junction breakdown voltage is increased by 1.4V
Keywords :
MOSFET; SRAM chips; dielectric materials; hafnium compounds; high-k dielectric thin films; leakage currents; low-power electronics; nanotechnology; silicon compounds; tin compounds; 55 nm; McFET SRAM cell; TiN-HfSiO; high-k dielectric; leakage current; local fin implantation scheme; CMOS technology; Electrodes; FETs; Fabrication; High K dielectric materials; High-K gate dielectrics; Leakage current; Random access memory; Tin; Transistors;
Conference_Titel :
VLSI Technology, 2006. Digest of Technical Papers. 2006 Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
1-4244-0005-8
DOI :
10.1109/VLSIT.2006.1705222
