Title :
A 460MHz at 397mV, 2.6GHz at 1.3V, 32b VLIW DSP, embedding FMAX tracking
Author :
Wilson, Robin ; Beigne, Edith ; Flatresse, Philippe ; Valentian, Alexandre ; Abouzeid, Fady ; Benoist, Thomas ; Bernard, Christian ; Bernard, Sebastien ; Billoint, Olivier ; Clerc, Sylvain ; Giraud, Bastien ; Grover, Anuj ; Le Coz, Julien ; Miro Panades,
Author_Institution :
STMicroelectron., Crolles, France
Abstract :
Wide-voltage-range-operation DSPs bring more versatility to achieve high energy efficiency in mobile applications to increase signal processing complexity and handle a large range of performance specifications. This paper describes a 32b DSP fabricated in 28nm UTBB FDSOI technology [1]. Body-bias-voltage (VBB) scaling from 0V up to ±2V (Pwell/Nwell) decreases the DSP core VDDMIN to 397mV and increases clock frequency by +400% at 500mV and +114% at 1.3V. In addition to technology gains, dedicated design features are included to increase frequency over the full VDD range, considering parameter variations. As depicted in Fig. 27.1.1, the 32b datapath VLIW DSP is organized around a MAC dedicated to complex arithmetic and two dedicated operators: a cordic/divider and a compare/select. Data enters the circuit through a serial interface and code is run from a 64×32b register file. It has been shown in [1] that a given operating frequency can be achieved at a lower VDD in UTBB FDSOI compared to bulk by applying a forward-body bias. An additional design step is achieved in this work by (1) increasing the frequency at low VDD thanks to a specific selection and design of standard cells with respect to power vs. performance and (2) dynamically tracking the maximum frequency to cope with variations.
Keywords :
digital signal processing chips; multiprocessing systems; silicon-on-insulator; FMAX tracking; UTBB FDSOI technology; VLIW DSP; body-bias-voltage scaling; compare/select; complex arithmetic; cordic/divider; dedicated operator; energy efficiency; forward-body bias; mobile application; signal processing complexity; size 28 nm; voltage 1.3 V; voltage 500 mV; wide-voltage-range-operation; Benchmark testing; Digital signal processing; Energy efficiency; Energy measurement; Frequency measurement; Monitoring; Silicon;
Conference_Titel :
Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2014 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4799-0918-6
DOI :
10.1109/ISSCC.2014.6757509