Technology Breakthrough of Body-Tied FinFET for sub 50 nm NOR Flash Memory

Author

Cho, Eun Suk ; Kim, Tae-Yong ; Cho, Byung Kyu ; Lee, Choong-Ho ; Lee, Jong Jin ; Fayrushin, Albert ; Lee, Chul ; Park, Donggun ; Ryu, Byung-Il

Author_Institution

Device Res. Team, Samsung Electron. Co., Gyeonggi

fYear

0

fDate

0-0 0

Firstpage

90

Lastpage

91

Abstract

We have achieved an optimal scheme for the practical application of body-tied FinFET for sub 50 nm NOR flash memory. Using this scheme, high program speed (Vt>8V@1mus) and low drain disturbance (DeltaVt=-0.1V@5ms) with a good reliability have been demonstrated. The effects of USC (ultra-shallow conformal) doping and SGHE (secondary generated hot electron) injection on program and drain disturbance characteristics of FinFET cells have been intensively studied. In addition, the (100) channel engineered body-tied FinFET shows manufacturable endurance characteristics

Keywords

MOSFET; NOR circuits; flash memories; hot carriers; semiconductor doping; -0.1 V; 1 mus; 5 ms; 50 nm; FinFET cells; NOR flash memory; body-tied FinFET; high program speed; low drain disturbance; secondary generated hot electron injection; semiconductor device reliability; ultra-shallow conformal doping; Character generation; Doping; FinFETs; Flash memory; High K dielectric materials; High-K gate dielectrics; Hot carriers; Oxidation; Reliability engineering; Secondary generated hot electron injection;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 2006. Digest of Technical Papers. 2006 Symposium on

Conference_Location

Honolulu, HI

Print_ISBN

1-4244-0005-8

Type

conf

DOI

10.1109/VLSIT.2006.1705231

Filename

1705231