Author :
Yu, H.Y. ; Kittl, J.A. ; Lauwers, A. ; Singanamalla, R. ; Demeurisse, C. ; Kubicek, S. ; Augendre, E. ; Veloso, A. ; Brus, S. ; Vrancken, C. ; Hoffmann, T. ; Mertens, Sofie ; Onsia, Bart ; Verbeeck, R. ; Demand, Marc ; Rothchild, A. ; Froment, B. ; Van Da
Abstract :
This report discusses a new and practical approach to implement low Vt bulk CMOS using Ni-based FUSI MOSFETs. On the nFET, we demonstrate for the first time that incorporating Yb by ion implantation can achieve similar reduction of effective work function (WF) compared to alloying making it a candidate for CMOS integration. We complement our previous work on WF modulation by Yb on NiSi/SiON with new data on NiSi/HfSiON and NiGeSi/HfSiON. On the pFET, we study the effect of Al and Pt on Ni-rich FUSI and integrate it with a SiGe-channel. Integration into our reference devices resulted in a Vt reduction from 0.55/0.61V down to 0.30/0.25V for nFET (NiSi:Yb gate) and pFET (Ni2 Si:Pt gate + SiGe channel) respectively on SiON without degradation of the dielectric integrity and long channel mobility, and without an increase in gate leakage and Dit
Keywords :
CMOS integrated circuits; MOSFET circuits; aluminium; germanium compounds; hafnium compounds; ion implantation; low-power electronics; nickel compounds; platinum; silicon compounds; work function; ytterbium; 0.25 V; Al; CMOS integration; FUSI MOSFET; Ni2Si:Pt; NiGeSi-HfSiON; NiSi-HfSiON; NiSi:Yb; bulk CMOS; dielectric integrity; ion implantation; long channel mobility; work function reductipon; Alloying; Aluminum alloys; Dielectrics; Germanium alloys; Germanium silicon alloys; Instruments; Ion implantation; MOSFETs; Platinum alloys; Silicon germanium;
