DocumentCode :
262539
Title :
27.8 A static contention-free single-phase-clocked 24T flip-flop in 45nm for low-power applications
Author :
Yejoong Kim ; Wanyeong Jung ; Inhee Lee ; Qing Dong ; Henry, M. ; Sylvester, Dennis ; Blaauw, D.
Author_Institution :
Univ. of Michigan, Ann Arbor, MI, USA
fYear :
2014
fDate :
9-13 Feb. 2014
Firstpage :
466
Lastpage :
467
Abstract :
Near-threshold computing (NTC) is an attractive solution to stagnating energy efficiencies in digital integrated circuits, arising from slowed voltage scaling in nanometer CMOS [1-2]. The design of sequential elements for NTC, as well as in voltage-scaled systems operating at both near-threshold and super-threshold, has not been extensively studied. However, it is well known that sequential elements have a strong sensitivity to process variations in NTC [2], which can have a significant impact on system yield and power consumption. In order to achieve reliable energy-efficient operation across a wide operating voltage range, a flip-flop should have the following attributes: 1) static operation, since dynamic nodes are highly susceptible to PVT variations at low voltage; 2) contention-free transitions, since ratioed logic has poor robustness across the wide range of device ION/IOFF ratios incurred with voltage scaling; 3) single-phase clocking, which avoids toggling of internal clock inverters and the corresponding power penalty; 4) minimum or no area penalty compared to conventional flip-flops.
Keywords :
CMOS logic circuits; flip-flops; low-power electronics; power aware computing; sequential circuits; NTC; PVT variations; area penalty; contention-free transitions; digital integrated circuits; energy-efficient operation; low-power applications; nanometer CMOS; near-threshold computing; process variations; sequential elements; single-phase clocking; size 45 nm; static contention-free single-phase clocked flip-flop; static operation; voltage scaling; voltage-scaled systems; CMOS integrated circuits; Clocks; Delays; Energy efficiency; Flip-flops; Power measurement; Semiconductor device measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2014 IEEE International
Conference_Location :
San Francisco, CA
ISSN :
0193-6530
Print_ISBN :
978-1-4799-0918-6
Type :
conf
DOI :
10.1109/ISSCC.2014.6757516
Filename :
6757516
Link To Document :
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