• DocumentCode
    2625433
  • Title

    High Performance Micro-Crystallized TaN/SrTiO3/TaN Capacitors for Analog and RF Applications

  • Author

    Chiang, K.C. ; Huang, C.C. ; Chin, Albert ; Chen, W.J. ; Kao, H.L. ; Hong, M. ; Kwo, J.

  • Author_Institution
    Dept. of EE, National Chiao-Tung Univ., Hsinchu
  • fYear
    0
  • fDate
    0-0 0
  • Firstpage
    102
  • Lastpage
    103
  • Abstract
    Using micro-crystallized high-k SrTiO3 on N+-treated TaN, very high 28 fF/mum2 capacitance density, low voltage linearity (alpha) of 92 ppm/V2 and small leakage of 3times10-8 A/cm2 at 2V are beyond ITRS spec of analog capacitor at year 2018. Further improving to 44 fF/mum2 and low alpha of 54 ppm/V2 are obtained for higher speed analog/RF ICs at 2 GHz
  • Keywords
    UHF integrated circuits; analogue integrated circuits; capacitors; high-k dielectric thin films; microwave integrated circuits; strontium compounds; tantalum compounds; titanium compounds; 2 GHz; 2 V; RF application; RFIC; TaN-SrTiO3-TaN; analog application; analog capacitor; high capacitance density; low voltage linearity; micro-crystallized capacitor; small leakage current; Capacitance; Capacitance-voltage characteristics; Density measurement; Electrodes; Leakage current; MIM capacitors; Materials science and technology; Plasma devices; Radio frequency; Random access memory;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, 2006. Digest of Technical Papers. 2006 Symposium on
  • Conference_Location
    Honolulu, HI
  • Print_ISBN
    1-4244-0005-8
  • Type

    conf

  • DOI
    10.1109/VLSIT.2006.1705237
  • Filename
    1705237
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2625433