Improved 1/f Noise Characteristics in Locally Strained Si CMOS Using Hydrogen-Controlled Stress Liners and Embedded SiGe

Author

Ueno, Tetsuji ; Rhee, Hwa Sung ; Lee, Ho ; Kim, Myung Sun ; Cho, Hans S. ; Baik, Hion Suck ; Jung, Youn Hwa ; Lee, Hyun Woo ; Park, Heung Sik ; Lee, Cheol Kyu ; Bae, Geum-Jong ; Lee, Nae-In

Author_Institution

Adv. Technol. Dev. Team, Samsung Electron. Co., Ltd., Yongin

fYear

0

fDate

0-0 0

Firstpage

104

Lastpage

105

Abstract

This paper reports the first experimental demonstration of improved 1/f noise characteristics in a locally strained Si MOS through hydrogen-controlled stress liners and embedded SiGe (eSiGe). For NMOS, the high hydrogen density (1times10²²cm^-3) in the stress liner results in three times more noise than that of PMOS. For PMOS, eSiGe proves to be superior to a compressive stress liner in noise due to the low hydrogen density in the system. The controlled stress does not generate interface states or other scattering centers, which increase noise, and only improves 1/f noise due to carrier mass reduction

Keywords

1/f noise; CMOS integrated circuits; Ge-Si alloys; 1/f noise characteristics; SiGe; carrier mass reduction; hydrogen-controlled stress liners; locally strained Si CMOS; low hydrogen density; Compressive stress; Germanium silicon alloys; Hydrogen; Interface states; MOS devices; Noise generators; Noise reduction; Silicon germanium; Stress control; Weight control;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 2006. Digest of Technical Papers. 2006 Symposium on

Conference_Location

Honolulu, HI

Print_ISBN

1-4244-0005-8

Type

conf

DOI

10.1109/VLSIT.2006.1705238

Filename

1705238