• DocumentCode
    2625496
  • Title

    Impact of HfSiON Induced Flicker Noise on Scaling of Future Mixed-Signal CMOS

  • Author

    Yasuda, Yuri ; Lin, Chung-Hsun ; Liu, Tsu-Jae King ; Hu, Chenming

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA
  • fYear
    0
  • fDate
    0-0 0
  • Firstpage
    106
  • Lastpage
    107
  • Abstract
    It is shown for the first time that HfSiON gate dielectric thickness has a strong impact on the flicker (1/f) noise of devices with Lg < 1mum. We have developed a simple model for both gate length (Lg) and HfSiON thickness dependences of N-FET flicker noise, based on excess traps at the gate-edges. P-FET noise does not exhibit such strong dependences. Scaling of future analog devices with high-k gate stack may be limited by noise considerations
  • Keywords
    1/f noise; CMOS integrated circuits; flicker noise; hafnium compounds; mixed analogue-digital integrated circuits; silicon compounds; 1/f noise; HfSiON; N-FET; P-FET; analog devices scaling; excess traps; gate dielectric thickness; high-k gate stack; induced flicker noise; mixed-signal CMOS; 1f noise; CMOS technology; Circuit noise; Dielectric devices; Fluctuations; High K dielectric materials; High-K gate dielectrics; Logic devices; Noise measurement; Semiconductor device modeling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, 2006. Digest of Technical Papers. 2006 Symposium on
  • Conference_Location
    Honolulu, HI
  • Print_ISBN
    1-4244-0005-8
  • Type

    conf

  • DOI
    10.1109/VLSIT.2006.1705239
  • Filename
    1705239
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2625496