Author :
Song, Young Jun ; Ryoo, K.C. ; Hwang, Yoo Na ; Jeong, C.W. ; Lim, D.W. ; Park, S.S. ; Kim, Jong In ; Kim, Ji H. ; Lee, S.Y. ; Kong, J.H. ; Ahn, S.J. ; Lee, S.H. ; Park, Jae Hyo ; Oh, J.H. ; Oh, Y.T. ; Kim, Jong Soo ; Shin, J.M. ; Fai, Y. ; Koh, G.H. ; Jeo
Abstract :
Advanced ring type technology and encapsulating scheme were developed to fabricate highly manufacturable and reliable 256Mb PRAM. Very uniform BEC area was prepared by the advanced ring type technology in which core dielectrics were optimized for cell contact CMP process. In addition, relatively high set resistance was stabilized from encapsulating Ge2Sb2Te5 (GST) stack with blocking layers, thus giving rise to a wide sensing window. These advanced ring type and encapsulating technologies can provide great potentials of developing high density 512Mb PRAM and beyond
Keywords :
antimony compounds; chemical mechanical polishing; encapsulation; germanium compounds; integrated circuit interconnections; integrated circuit metallisation; random-access storage; tellurium compounds; 256 MBytes; CMP process; GST stack; Ge2Sb2Te5; PRAM; blocking layers; bottom electrode contact; cell contact; encapsulating technology; phase change random acess memory; ring contact technology; wide sensing window; CMOS technology; Cleaning; Degradation; Dielectrics; Electrodes; Manufacturing processes; Phase change random access memory; Planarization; Research and development; Tellurium;
