Title :
A 90nm Phase Change Memory Technology for Stand-Alone Non-Volatile Memory Applications
Author :
Pellizzer, F. ; Benvenuti, A. ; Gleixner, B. ; Kim, Y. ; Johnson, B. ; Magistretti, M. ; Marangon, T. ; Pirovano, A. ; Bez, R. ; Atwood, G.
Author_Institution :
STMicroelectronics, Milan
Abstract :
A 90nm technology node phase change memory (PCM) process, based on a chalcogenide material storage element with a vertical pnp bipolar junction transistor (BJT) selector device, is presented. The small cell area of 12F2, the good electrical results, and the intrinsic reliability demonstrate the viability of the PCM cell concept. Programming currents as low as 400muA, very good distributional data achieved on multi-megabit arrays for programming (set and reset), endurance, and retention, demonstrate the suitability of PCM for fabrication of a high density array at 90nm
Keywords :
bipolar transistors; phase change materials; random-access storage; 90 nm; 90nm technology node; BJT selector device; PCM cell concept; PCM process; chalcogenide material storage element; high density array; multi-megabit arrays; nonvolatile memory; phase change memory technology; vertical pnp bipolar junction transistor; Costs; Educational institutions; Fabrication; Flash memory; Material storage; Nonvolatile memory; Phase change materials; Phase change memory; Scalability; Tungsten;
Conference_Titel :
VLSI Technology, 2006. Digest of Technical Papers. 2006 Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
1-4244-0005-8
DOI :
10.1109/VLSIT.2006.1705247
