World Smallest 0.34/spl mu/m~ COB Cell 1T1C 64Mb FRAM with New Sensing Architecture and Highly Reliable MOCVD PZT Integration Technology

Author

Kang, Y.M. ; Joo, H.J. ; Park, J.H. ; Kang, S.K. ; Kim, J.H. ; Oh, S.G. ; Kim, H.S. ; Kang, J.Y. ; Jung, J.Y. ; Choi, D.Y. ; Lee, E.S. ; Lee, S.Y. ; Jeong, H.S. ; Kim, Kinam

Author_Institution

Semicond. R&D Center, Samsung Electron. Co. Ltd., Yongin

fYear

0

fDate

0-0 0

Firstpage

124

Lastpage

125

Abstract

We have successfully demonstrated a 0.34mum² COB cell 1T1C 64Mb FRAM at 150nm technology node. The minimum signal window between data "1" and data "0" of 64M bit cells was evaluated to 300mV at 85degC, 1.6V V_DD. This wide signal window was achieved by introducing advanced anneal technology and optimized capacitor layout, from which the variation of individual cell charge was greatly improved, along with robust 2-D stack capacitor technologies such as 70nm thick MOCVD PZT technology with SRO electrode. In addition, a new reference cell scheme for 1T1C architecture, the multi-reference cell equalizing scheme (MRCE), greatly improved the variation of the reference cell signal for sufficient 1T1C sensing margin. As a result, no single bit failure was found in our 1T1C 64Mb FRAM after 500hour bake at 150degC

Keywords

MOCVD; ferroelectric storage; lead compounds; random-access storage; titanium compounds; zirconium compounds; 1.6 V; 150 C; 150 nm; 1T1C 64Mb FRAM; 1T1C architecture; 2D stack capacitor technologies; 300 mV; 500 hour; 64 Mbit; 64M bit cells; 85 C; COB cell; MOCVD PZT integration technology; MRCE; PbZrTiO₃; SRO electrode; anneal technology; capacitor layout; minimum signal window; multireference cell equalizing scheme; reference cell scheme; sensing architecture; Capacitors; Electrodes; Etching; Ferroelectric films; Ferroelectric materials; Isolation technology; MOCVD; Nonvolatile memory; Random access memory; Robustness;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 2006. Digest of Technical Papers. 2006 Symposium on

Conference_Location

Honolulu, HI

Print_ISBN

1-4244-0005-8

Type

conf

DOI

10.1109/VLSIT.2006.1705248

Filename

1705248