Title :
Optoelectronic logic devices implemented on GaAs photodetectors
Author :
She, T.C. ; Shu, C.
Author_Institution :
Dept. of Electron. Eng., Chinese Univ. of Hong Kong, Shatin, Hong Kong
Abstract :
Optoelectronic exclusive-OR and exclusive-NOR gates have been demonstrated with a device structure incorporating a composite pair of GaAs photodetectors. Special optical pulse trains were constructed to test the functionality of the logic units. Electrical output from the devices was used to drive a pre-biased laser diode to produce an optical output signal. A time response faster than 400 ps with an on-off contrast ratio of 19 dB has been obtained. In addition, a 2 to 4 decoder was proposed as a means for high speed optical addressing
Keywords :
III-V semiconductors; decoding; gallium arsenide; high-speed optical techniques; integrated optoelectronics; logic gates; optical logic; photodetectors; 2 to 4 decoder; 400 ps; GaAs; GaAs photodetectors; exclusive-NOR gates; exclusive-OR gates; high speed optical addressing; optical output signal; optical pulse trains; optoelectronic logic devices; pre-biased laser diode; Decoding; Diode lasers; Gallium arsenide; High speed optical techniques; Logic devices; Logic testing; Optical devices; Optical pulses; Photodetectors; Time factors;
Conference_Titel :
Electron Devices Meeting, 1994.Proceedings., 1994 IEEE Hong Kong
Print_ISBN :
0-7803-2086-7
DOI :
10.1109/HKEDM.1994.395131
