Optoelectronic logic devices implemented on GaAs photodetectors

Author

She, T.C. ; Shu, C.

Author_Institution

Dept. of Electron. Eng., Chinese Univ. of Hong Kong, Shatin, Hong Kong

fYear

1994

fDate

34533

Firstpage

54

Lastpage

57

Abstract

Optoelectronic exclusive-OR and exclusive-NOR gates have been demonstrated with a device structure incorporating a composite pair of GaAs photodetectors. Special optical pulse trains were constructed to test the functionality of the logic units. Electrical output from the devices was used to drive a pre-biased laser diode to produce an optical output signal. A time response faster than 400 ps with an on-off contrast ratio of 19 dB has been obtained. In addition, a 2 to 4 decoder was proposed as a means for high speed optical addressing

Keywords

III-V semiconductors; decoding; gallium arsenide; high-speed optical techniques; integrated optoelectronics; logic gates; optical logic; photodetectors; 2 to 4 decoder; 400 ps; GaAs; GaAs photodetectors; exclusive-NOR gates; exclusive-OR gates; high speed optical addressing; optical output signal; optical pulse trains; optoelectronic logic devices; pre-biased laser diode; Decoding; Diode lasers; Gallium arsenide; High speed optical techniques; Logic devices; Logic testing; Optical devices; Optical pulses; Photodetectors; Time factors;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1994.Proceedings., 1994 IEEE Hong Kong

Print_ISBN

0-7803-2086-7

Type

conf

DOI

10.1109/HKEDM.1994.395131

Filename

395131