Title :
Silicon-on-Insulator MOSFETs with Hybrid Crystal Orientations
Author :
Yang, May ; Chan, Kap Luk ; Kumar, Ajit ; Lo, Shih-Hsiang ; Sleight, J. ; Chang, Ly-Yu ; Rao, Ramesh ; Bedell, S. ; Ray, Avik ; Ott, Johannes ; Patel, Jatin ; D´Emic, C. ; Rubino, J. ; Zhang, Ye ; Shi, Li-Hua ; Steen, Steven ; Sikorski, E. ; Newbury, J. ;
Author_Institution :
IBM Semicond. Res. & Dev. Center, T. J. Watson Res. Center, Yorktown Heights, NY
Abstract :
Novel silicon-on-insulator (SOI) structures are presented on hybrid orientation substrates (SuperHOT), i.e. with nFETs on (100) surface orientation and pFETs on (110) orientation, using silicon lateral overgrowth. Functional SOI MOSFETs and ring oscillators are demonstrated
Keywords :
MOSFET; crystal orientation; oscillators; silicon; silicon-on-insulator; substrates; (110) surface orientation; SOI MOSFET; Si; hybrid crystal orientations; hybrid orientation substrates; nFET; pFET; ring oscillators; silicon lateral overgrowth; silicon-on-insulator structures; CMOS technology; Capacitance; Circuits; FETs; Fabrication; MOSFETs; Ring oscillators; Silicon on insulator technology; Stress; Substrates;
Conference_Titel :
VLSI Technology, 2006. Digest of Technical Papers. 2006 Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
1-4244-0005-8
DOI :
10.1109/VLSIT.2006.1705252
