Author :
Andrieu, F. ; Dupre, C. ; Rochette, F. ; Faynot, O. ; Tosti, L. ; Buj, Christel ; Rouchouze, E. ; Casse, M. ; Ghyselen, B. ; Cayrefoureq, I. ; Brevard, L. ; Allain, F. ; Barbe, J.C. ; Cluzel, Jacques ; Vandooren, A. ; Denorme, S. ; Ernst, Thomas ; Fenouil
Abstract :
We investigate for the first time the experimental performance of strained silicon directly on insulator (sSOI) for short and narrow FDSOI NMOS transistors integrated with a TiN/HfO2 gate stack. A +16% drive current improvement is reported for a 25nm gate length (among the best ever reported for short substrate-induced strained devices). Through in-depth electrical characterization and mechanical simulations, transition from bi-axial to uni-axial strain is evidenced in extremely narrow sSOI channels, with a 40% mobility enhancement for 35nm wide devices. This highlights that the strain is not lost at sub-40nm dimensions
Keywords :
MOSFET; carrier mobility; hafnium compounds; nanoelectronics; silicon-on-insulator; titanium compounds; 25 nm; 35 nm; FDSOI NMOS transistors; Si-TiN-HfO2; biaxial strain; electrical characterization; extremely narrow channels; gate stack; mechanical simulations; mobility enhancement; narrow strained FDSOI; short strained FDSOI; strained silicon directly on insulator; uniaxial strain; Capacitive sensors; Contacts; Epitaxial growth; Etching; Hafnium oxide; Insulation; MOSFET circuits; Silicon; Substrates; Tin;
