Title :
Calculation of I-V curves of a GaAs MESFET with nonuniform channel doping by means of numerical integration
Author_Institution :
Sch. of Eng. & Comput. Sci., Oakland Univ., Rochester, MI, USA
Abstract :
A numerical method for calculating the I-V characteristics of a GaAs MESFET with ion implanted layer is presented. This method is based on the finding of the channel conductance as a function of the voltage drop across the metal-semiconductor junction which in turn is related to the depletion depth of the active layer through the solution of Poisson´s equation
Keywords :
III-V semiconductors; Schottky gate field effect transistors; doping profiles; gallium arsenide; integration; ion implantation; numerical analysis; semiconductor device models; GaAs; GaAs MESFET; I-V characteristics; I-V curves; Poisson equation; channel conductance; depletion depth; ion implanted layer; metal-semiconductor junction; nonuniform channel doping; numerical integration; voltage drop; Doping profiles; Electrons; Gallium arsenide; Implants; MESFETs; Permittivity; Poisson equations; Semiconductor device doping; Substrates; Voltage;
Conference_Titel :
Electron Devices Meeting, 1994.Proceedings., 1994 IEEE Hong Kong
Print_ISBN :
0-7803-2086-7
DOI :
10.1109/HKEDM.1994.395136
