Title :
Electrical performance and reliability of n-MOSFET´s with gate dielectrics fabricated by different techniques
Author :
Xu, Zeng ; Lai, P.T. ; Ng, W.T.
Author_Institution :
Dept. of Electr. & Electron. Eng., Hong Kong Univ., Hong Kong
Abstract :
In this paper, electrical characteristics and reliability of n-MOSFETs under DC/AC stress are investigated and results are compared among the devices with gate dielectrics fabricated by different techniques. From the results it is concluded that N2O nitridation is a more promising technique to incorporate nitrogen into gate oxide than NH3 nitridation both from the point of view of electrical performance and stability under CHCS and dynamic stress
Keywords :
MOSFET; dielectric thin films; nitridation; semiconductor device reliability; N2O; N2O nitridation; NH3; NH3 nitridation; NMOSFET; electrical characteristics; gate dielectrics; n-MOSFET; n-channel devices; reliability; stability; Degradation; Dielectrics; Electron mobility; Electron traps; Interface states; MOSFET circuits; Nitrogen; Scattering; Stress; Transconductance;
Conference_Titel :
Electron Devices Meeting, 1994.Proceedings., 1994 IEEE Hong Kong
Print_ISBN :
0-7803-2086-7
DOI :
10.1109/HKEDM.1994.395138
