DocumentCode
2625997
Title
A New Route to Ultra-High Density Memory Using the Micro to Nano Addressing Block (MNAB)
Author
Shenoy, R.S. ; Gopalakrishnan, K. ; Rettner, C.T. ; Bozano, L.D. ; King, R.S. ; Kurdi, B. ; Wickramasinghe, H.K.
Author_Institution
IBM Almaden Res. Center, San Jose, CA
fYear
0
fDate
0-0 0
Firstpage
140
Lastpage
141
Abstract
For the first time, we demonstrate sublithographic memory read/write operation using micro to nano addressing block (MNAB) decoders. Test structures are fabricated with integrated one-time programmable oxide ROM elements addressed using MNAB devices that have 4 sub-50 nm silicon fins at 140 nm period. Functional operation is obtained for all 4-bit ROM sequences and over different ROM cell areas
Keywords
decoding; integrated memory circuits; read-only storage; silicon; 140 nm; 4 bit; 50 nm; MNAB devices; ROM; Si; memory read operation; memory write operation; micro to nano addressing block; sublithographic memory; test structures; ultra-high density memory; Decoding; Nanolithography; Nonvolatile memory; Phase change memory; Read only memory; Read-write memory; Self-assembly; Silicon; Testing; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 2006. Digest of Technical Papers. 2006 Symposium on
Conference_Location
Honolulu, HI
Print_ISBN
1-4244-0005-8
Type
conf
DOI
10.1109/VLSIT.2006.1705256
Filename
1705256
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