DocumentCode :
2626004
Title :
The Features and Characteristics of 5-mega CMOS Image Sensor with Topologically Unique 1.7/spl m/m~1.7/spl mu/m Pixels
Author :
Lee, Seok-Ha ; Moon, Chang-Rok ; Paik, Kee-Hyun ; Hwang, Sung-Ho ; Shin, Jong-Cheol ; Jung, Jongwan ; Lee, Kangbok ; Noh, Hyunpil ; Lee, Duckhyung ; Kim, Kinam
Author_Institution :
Memory Div., Samsung Electron. Co., Gyeonggi-Do
fYear :
0
fDate :
0-0 0
Firstpage :
142
Lastpage :
143
Abstract :
CMOS image sensor (CIS) of 5-mega pixel density has been successfully developed with the smallest pixels (1.7mumtimes1.7mum) ever made. The newly introduced unique pixel architecture brought excellent optical symmetry and high electron capacity. Degradation of sensitivity and cross-talk can be suppressed with the optimization of the optical structure through proper color filter material and reduction of total aspect ratio (vertical stack height/pixel pitch) with Cu back end of line (BEOL)
Keywords :
CMOS image sensors; copper; crosstalk; optical filters; 1.7 micron; 5 Mpixel; BEOL; CMOS image sensor; Cu; aspect ratio reduction; color filter material; high electron capacity; optical structure optimization; optical symmetry; unique pixel architecture; CMOS image sensors; Computational Intelligence Society; Electron optics; Moon; Optical crosstalk; Optical distortion; Optical filters; Optical saturation; Optical sensors; Pixel;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, 2006. Digest of Technical Papers. 2006 Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
1-4244-0005-8
Type :
conf
DOI :
10.1109/VLSIT.2006.1705257
Filename :
1705257
Link To Document :
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