DocumentCode
2626020
Title
A methodology for converting polygon based standard cell from bulk CMOS to SOI
Author
Wu, Kevin Y. ; Chan, Philip C.H.
Author_Institution
Dept. of Electr. & Electron. Eng., Hong Kong Univ., Hong Kong
fYear
1994
fDate
34533
Firstpage
8
Lastpage
11
Abstract
We have developed a methodology to convert polygon-based full-custom bulk CMOS cells to SOI/CMOS. This methodology is implemented using the Cadence Design Systems Virtuoso environment. We have demonstrated the methodology by converting the Orbit Scalable CMOSN standard cells. The results are quite good for small cells. However, for complex and highly optimized cells, this methodology may lead to a slight increase in the cell area. We have also demonstrated that this methodology can also be applied to further reduce the cell areas if the SOI/CMOS cells are resigned to take advantage of the low-power and high-performance capability of SOI/CMOS
Keywords
CMOS integrated circuits; application specific integrated circuits; cellular arrays; circuit layout CAD; integrated circuit layout; silicon-on-insulator; Cadence Design Systems; Orbit Scalable CMOSN standard cells; SOI/CMOS cells; Virtuoso environment; conversion technique; full-custom bulk CMOS cells; polygon based standard cell; CMOS process; CMOS technology; Fabrication; Layout; Libraries; Silicon on insulator technology; Substrates; Thin film circuits; Transistors; Ultra large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1994.Proceedings., 1994 IEEE Hong Kong
Print_ISBN
0-7803-2086-7
Type
conf
DOI
10.1109/HKEDM.1994.395140
Filename
395140
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