DocumentCode
2626043
Title
A process scheme chosen for BiCMOS circuit
Author
Bian, J. ; Lu, W.H.
Author_Institution
Hua Ko Electronics Co. Ltd., Hong Kong
fYear
1994
fDate
34533
Firstpage
4
Lastpage
7
Abstract
Based on bipolar and metal-gate CMOS processes, and utilizing a process simulation method to calculate the key process parameter, an optimum BiCMOS process is obtained for HKE5833 serial-input latched drivers
Keywords
BiCMOS integrated circuits; integrated circuit technology; semiconductor process modelling; BiCMOS process; HKE5833; bipolar process; fabrication process optimisation; metal-gate CMOS process; process simulation method; serial-input latched drivers; BiCMOS integrated circuits; CMOS logic circuits; CMOS process; CMOS technology; Circuit simulation; Computational modeling; Driver circuits; Latches; Logic design; Phase change materials;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1994.Proceedings., 1994 IEEE Hong Kong
Print_ISBN
0-7803-2086-7
Type
conf
DOI
10.1109/HKEDM.1994.395141
Filename
395141
Link To Document