DocumentCode :
2626043
Title :
A process scheme chosen for BiCMOS circuit
Author :
Bian, J. ; Lu, W.H.
Author_Institution :
Hua Ko Electronics Co. Ltd., Hong Kong
fYear :
1994
fDate :
34533
Firstpage :
4
Lastpage :
7
Abstract :
Based on bipolar and metal-gate CMOS processes, and utilizing a process simulation method to calculate the key process parameter, an optimum BiCMOS process is obtained for HKE5833 serial-input latched drivers
Keywords :
BiCMOS integrated circuits; integrated circuit technology; semiconductor process modelling; BiCMOS process; HKE5833; bipolar process; fabrication process optimisation; metal-gate CMOS process; process simulation method; serial-input latched drivers; BiCMOS integrated circuits; CMOS logic circuits; CMOS process; CMOS technology; Circuit simulation; Computational modeling; Driver circuits; Latches; Logic design; Phase change materials;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1994.Proceedings., 1994 IEEE Hong Kong
Print_ISBN :
0-7803-2086-7
Type :
conf
DOI :
10.1109/HKEDM.1994.395141
Filename :
395141
Link To Document :
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