Title :
18.3 Superior Current Enhancement in SiGe Channel p-MOSFETs Fabricated on [110] Surface
Author :
Liu, P.W. ; Pan, J.W. ; Chang, T.Y. ; Tsai, T.L. ; Chen, T.F. ; Liu, Y.C. ; Tsai, C.H. ; Lan, B.C. ; Lin, Y.H. ; Chiang, W.T. ; Tsai, C.T.
Author_Institution :
Central R&D Div., United Microelectron. Corp., Hsin-Chu
Abstract :
The promising potential of (110) SiGe channel as next generation high performance p-MOSFETs is well demonstrated in this work. As high as 48% of drive current enhancement on SiGe channel p-MOSFETs fabricated on (110) surface have been achieved for the first time. In addition, combining with compressive stress capping layer, the (110) SiGe channel p-MOSFETs exhibits an extended 81% Idsat gain with Idsat of 850muA/mum at 100nA/mum Ioff. The 32% larger longitudinal piezoresistance coefficient compared to Si extracted from SiGe channel p-MOSFET reveals the advantage of applying strain in SiGe channel. The 3.3times hole mobility enhancement of (110) SiGe over (100) Si illustrates the advantage of this device architecture
Keywords :
Ge-Si alloys; MOSFET; hole mobility; semiconductor devices; stress relaxation; (100) surface; SiGe; compressive stress capping layer; drive current enhancement; high performance p-MOSFET; hole mobility enhancement; next generation p-MOSFET; strain channel; superior current enhancement; surface fabrication; Capacitive sensors; Cities and towns; Compressive stress; Electronic mail; Germanium silicon alloys; MOSFET circuits; Microelectronics; Piezoresistance; Research and development; Silicon germanium;
Conference_Titel :
VLSI Technology, 2006. Digest of Technical Papers. 2006 Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
1-4244-0005-8
DOI :
10.1109/VLSIT.2006.1705260
