Origin of Drivability Enhancement in Scaled pMOSFETs with 45/spl deg/ Rotated <100> Channels

Author

Saito, S. ; Hisamoto, D. ; Kimura, Yuichi ; Sugii, N. ; Tsuchiya, R. ; Torii, K. ; Kimur, S.

Author_Institution

Central Res. Lab., Hitachi, Ltd., Tokyo

fYear

0

fDate

0-0 0

Firstpage

150

Lastpage

151

Abstract

We have elucidated the mechanism of the drive current enhancement in <100> channel pMOSFETs on (100) substrate. In spite of the huge anisotropic effective mass, the long channel mobility (mu_eff) of <100> is identical to that of <110>, while it is enhanced when L and W are scaled. We found evidence that the origin is process induced stress, and the mu_eff enhancement is theoretically supported by the reduction of the average effective mass in a diffusive transport regime. We propose that a combination of <100> channel and biaxial compressive stress is effective to enhance mu_eff

Keywords

MOSFET; carrier mobility; effective mass; stress relaxation; substrates; surface diffusion; (100) substrate; biaxial compressive stress; channel compressive stress; channel mobility enhancement; diffusive transport regime; drivability enhancement; drive current enhancement; pMOSFET; process induced stress; Anisotropic magnetoresistance; Capacitive sensors; Compressive stress; Conductivity; Electrical capacitance tomography; Electron mobility; MOSFETs; Phonons; Scattering; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 2006. Digest of Technical Papers. 2006 Symposium on

Conference_Location

Honolulu, HI

Print_ISBN

1-4244-0005-8

Type

conf

DOI

10.1109/VLSIT.2006.1705261

Filename

1705261