Title :
High Performance Dual Metal Gate CMOS with High Mobility and Low Threshold Voltage Applicable to Bulk CMOS Technology
Author :
Yamaguchi, S. ; Tai, K. ; Hirano, T. ; Ando, T. ; Hiyama, S. ; Wang, J. ; Hagimoto, Y. ; Nagahama, Y. ; Kato, T. ; Nagano, K. ; Yamanaka, M. ; Terauchi, S. ; Kanda, S. ; Yamamoto, R. ; Tateshita, Y. ; Tagawa, Y. ; Iwamoto, H. ; Saito, M. ; Nagashima, N. ;
Author_Institution :
Semicond. Technol. Dev. Group, Sony Corp., Kanagawa
Abstract :
We have developed a dual metal gate CMOS technology with HfSix for nMOS and Ru for pMOS on HfO2 gate dielectric. These gate stacks show high mobility (100% of universal mobility for electron, 80% for hole at high fields) down to Tinv of 1.7 nm and symmetrical low Vt equivalent to poly-Si/SiO2. As a result, high drive currents of 780 muA/mum and 265 muA/mum at Ioff = 1 nA/mum are achieved for Vdd = 1.0 V in Lg = 60 nm nMOS and pMOS, respectively We have applied the mobility enhancement technology to the Ru/HfO2 pMOS by utilizing (110)-substrate. As a result, an excellent drive current of 400 muA/mum (151% improvement over (100)-p+poly-Si/SiO2) is achieved
Keywords :
CMOS integrated circuits; carrier mobility; hafnium compounds; high-k dielectric thin films; low-power electronics; ruthenium; silicon compounds; substrates; (100) substrate; 1 V; 60 nm; HfSi; Ru-HfO2; Si-SiO2; bulk CMOS technology; drive current; dual metal gate CMOS; gate dielectric; high field mobility; low threshold voltage; mobility enhancement; nMOS; pMOS; universal mobility; CMOS process; CMOS technology; Charge carrier processes; Electrodes; Electron mobility; Hafnium oxide; High-K gate dielectrics; MOS devices; Threshold voltage; Wet etching;
Conference_Titel :
VLSI Technology, 2006. Digest of Technical Papers. 2006 Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
1-4244-0005-8
DOI :
10.1109/VLSIT.2006.1705262
