• DocumentCode
    2626165
  • Title

    A silicon pixel readout ASIC in CMOS 0.13 μm for the PANDA microvertex detector

  • Author

    Calvo, D. ; De Remigis, P. ; Kugathasan, T. ; Mazza, G. ; Mignone, M. ; Rivetti, A. ; Salerno, S. ; Stockmanns, T. ; Wheadon, R.

  • Author_Institution
    Istituto Nazionale di Fisica Nucleare sezione di Torino, 10125, Italy
  • fYear
    2008
  • fDate
    19-25 Oct. 2008
  • Firstpage
    2934
  • Lastpage
    2939
  • Abstract
    The requirements for the PANDA Micro Vertex Detector in terms of track density and absence of a trigger signal lead to the need of a custom solution for the electronic readout of the silicon pixel detectors. A reduced scale prototype with two 128 cells and two 32 cells columns has been designed in a CMOS 0.13 μm technology and successfully tested. The ASIC measures the 2-D position, the hit arrival time and the charge released via a Time over Threshold technique.
  • Keywords
    Application specific integrated circuits; CMOS technology; Charge measurement; Current measurement; Detectors; Position measurement; Prototypes; Silicon; Testing; Time measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nuclear Science Symposium Conference Record, 2008. NSS '08. IEEE
  • Conference_Location
    Dresden, Germany
  • ISSN
    1095-7863
  • Print_ISBN
    978-1-4244-2714-7
  • Electronic_ISBN
    1095-7863
  • Type

    conf

  • DOI
    10.1109/NSSMIC.2008.4774980
  • Filename
    4774980