DocumentCode
2626165
Title
A silicon pixel readout ASIC in CMOS 0.13 μm for the PANDA microvertex detector
Author
Calvo, D. ; De Remigis, P. ; Kugathasan, T. ; Mazza, G. ; Mignone, M. ; Rivetti, A. ; Salerno, S. ; Stockmanns, T. ; Wheadon, R.
Author_Institution
Istituto Nazionale di Fisica Nucleare sezione di Torino, 10125, Italy
fYear
2008
fDate
19-25 Oct. 2008
Firstpage
2934
Lastpage
2939
Abstract
The requirements for the PANDA Micro Vertex Detector in terms of track density and absence of a trigger signal lead to the need of a custom solution for the electronic readout of the silicon pixel detectors. A reduced scale prototype with two 128 cells and two 32 cells columns has been designed in a CMOS 0.13 μm technology and successfully tested. The ASIC measures the 2-D position, the hit arrival time and the charge released via a Time over Threshold technique.
Keywords
Application specific integrated circuits; CMOS technology; Charge measurement; Current measurement; Detectors; Position measurement; Prototypes; Silicon; Testing; Time measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Nuclear Science Symposium Conference Record, 2008. NSS '08. IEEE
Conference_Location
Dresden, Germany
ISSN
1095-7863
Print_ISBN
978-1-4244-2714-7
Electronic_ISBN
1095-7863
Type
conf
DOI
10.1109/NSSMIC.2008.4774980
Filename
4774980
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