DocumentCode
2626193
Title
Design and noise analysis of charge sensitive amplifier for readout of pixelized thin film amorphous silicon sensors
Author
Poltorak, K. ; Dabrowski, W. ; Jarron, P. ; Kaplon, J.
Author_Institution
European Organization for Nuclear Research CERN, CH-1211 Genve 23, Switzerland
fYear
2008
fDate
19-25 Oct. 2008
Firstpage
2946
Lastpage
2951
Abstract
Future high-energy physics experiments entail the need to improve the existing detection technologies, as well as develop new ones. Larger luminosities of the new accelerators require greater granularity of tracking detectors, which will be exposed to much higher doses of radiation. One of the newly-investigated solutions for tracking detectors is the Thin Film on ASIC (TFA) technology, which allows combining advantages of Monolithic Active Pixel and Hybrid Pixel technologies. In the paper we present noise analysis of a front-end circuit for readout of a TFA sensor. The circuit is based on a charge sensitive preamplifier built around an un-buffered cascode stage with active reset circuit. The feedback capacitance is reset through a transistor biased with a constant current instead of a voltage controlled reset transistor in order to limit parasitic charge injection into a very small feedback capacitance. Detailed analysis of noise in the reset and the readout phase and design optimization based on the Enz-Krummenacher-Vittoz (EKV) transistor models as well as test results of prototypes are presented.
Keywords
Amorphous silicon; Application specific integrated circuits; Circuit noise; Feedback; Parasitic capacitance; Physics; Radiation detectors; Semiconductor thin films; Thin film circuits; Thin film sensors;
fLanguage
English
Publisher
ieee
Conference_Titel
Nuclear Science Symposium Conference Record, 2008. NSS '08. IEEE
Conference_Location
Dresden, Germany
ISSN
1095-7863
Print_ISBN
978-1-4244-2714-7
Electronic_ISBN
1095-7863
Type
conf
DOI
10.1109/NSSMIC.2008.4774982
Filename
4774982
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