A Novel Remote Reactive Sink Layer Technique for the Control of N and O Concentrations in Metal/High-k Gate Stacks

Author

Akasaka, Y. ; Shiraishi, K. ; Umezawa, N. ; Ogawa, O. ; Kasuya, T. ; Chikyow, T. ; Ootsuka, F. ; Nara, Y. ; Nakamura, K.

Author_Institution

Semicond. Leading Edge Technol. Inc., Ibaraki

fYear

0

fDate

0-0 0

Firstpage

164

Lastpage

165

Abstract

A novel technique for the control of nitrogen (N) and oxygen (O) concentrations in the metal/high-k gate stacks is proposed. By inserting a reactive metal (Ti) layer remote from work function metal and high-k insulator, N and O concentration is easily decreased. This technique effectively suppresses the EOT increase after high-temperature annealing. Moreover, improved electron mobility and decreased interfacial trap density can be obtained by this technique. We demonstrated MISFET with extremely high electron mobility and thin EOT can be easily obtained even with relaxed process of HfSiON

Keywords

MISFET; electron mobility; hafnium compounds; high-k dielectric thin films; interface states; metal-insulator boundaries; nitrogen; oxygen; rapid thermal annealing; work function; EOT; HfSiON; MISFET; concentration control; high-k insulator; high-temperature annealing; improved electron mobility; interfacial trap density; metal-high k gate stacks; reactive metal insertion; remote reactive sink layer; work function metal; Annealing; Channel bank filters; Electrodes; Hafnium; High K dielectric materials; High-K gate dielectrics; Insulation; MISFETs; Metal-insulator structures; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 2006. Digest of Technical Papers. 2006 Symposium on

Conference_Location

Honolulu, HI

Print_ISBN

1-4244-0005-8

Type

conf

DOI

10.1109/VLSIT.2006.1705268

Filename

1705268