Enhanced Performance of PMOS MUGFET via Integration of Conformal Plasma-Doped Source/Drain Extensions

Author

Lenoble, D. ; Anil, K.G. ; De Keersgieter, A. ; Eybens, P. ; Collaert, N. ; Rooyackers, R. ; Brus, S. ; Zimmerman, P. ; Goodwin, M. ; Vanhaeren, D. ; Vandervorst, W. ; Radovanov, S. ; Godet, L. ; Cardinaud, C. ; Biesemans, S. ; Skotnicki, T. ; Jurczak, M.

Author_Institution

STMicroelectron., Leuven

fYear

0

fDate

0-0 0

Firstpage

168

Lastpage

169

Abstract

For the first time, scaled PMOS MUGFET devices with TiCN/HfO₂ gate stack is doped with specific pulsed plasma doping processes. This paper first highlights the key benefit brought by conformal source/drain extensions, demonstrates how pulsed plasma doping process can be tuned to conformal dope very dense fin structures and finally shows that high performance (+24% vs. ion implant reference) multi-gate pMOS device (720 muA/mum @ I_off 20nA/mum, at V_ds= -1.2V) is achieved with extensions formed by optimized PLAD process

Keywords

MOSFET; ion implantation; plasma materials processing; semiconductor doping; -1.2 V; PMOS MUGFET; TiCN-HfO₂; conformal doping; fin structures; gate stack; ion implantation; multigate pMOS device; optimized PLAD process; pulsed plasma doping; source-drain extensions; Annealing; Cathodes; Doping; Hafnium oxide; Implants; Ion beams; Plasma density; Plasma devices; Plasma immersion ion implantation; Plasma sources;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 2006. Digest of Technical Papers. 2006 Symposium on

Conference_Location

Honolulu, HI

Print_ISBN

1-4244-0005-8

Type

conf

DOI

10.1109/VLSIT.2006.1705270

Filename

1705270